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Entry  Thursday, September 15, 2016, 16:37, Laura Lambert, SiC, 39530-9, HP-FEBIAD, In progress, Sintering SiC#35 
    Reply  Monday, September 19, 2016, 18:48, John Wong, SiC, 39530-9, HP-FEBIAD, In progress, Sintering SiC#35 - Change OMEGA/MiKRON slopes 
       Reply  Tuesday, September 20, 2016, 15:40, Laura Lambert, SiC, 39530-9, HP-FEBIAD, In progress, Sintering SiC#35 sintering_target_data.xlsx
          Reply  Thursday, September 22, 2016, 12:14, John Wong, SiC, 39530-9, HP-FEBIAD, In progress, Sintering SiC#35 
             Reply  Monday, September 26, 2016, 13:49, Laura Lambert, SiC, 39530-9, HP-FEBIAD, Done, Sintering SiC#35 comparison_of_temperature_drop_-_3x_snapshots.JPG
Message ID: 324     Entry time: Tuesday, September 20, 2016, 15:40     In reply to: 323     Reply to this: 325
Author: Laura Lambert 
Target Material: SiC 
Target Oven W.O#: 39530-9 
Source: HP-FEBIAD 
Status: In progress 
Subject: Sintering SiC#35 

John Wong wrote:

Laura Lambert wrote:

 Thursday, September 15, 2016, 16:23

Target container contains 487 discs of SiC 

Target packed length = 16cm. 

Mass of SiC(green)  = 58.8795g

Container is wrapped with 1x heatshield around each side of cooling fins; no end caps are inserted yet - coated spring inserted both sides to hold discs in place.

Sintering temp = 1800C

Chamber is currently being pumped down. 


 Friday, September 16, 2016, 10:50

Tapped up manually to 50A

Waited ~1hr , vacuum stable.

IGP1 = 1.24e-5 Torr

Initiating auto-ramp at 0.2A/min and 0.1A/min for the TGHT and TBHT respectively.

TGHT max = 500A.  TBHT max at 230A. 

Slope on OMEGA = 1.15


 Monday, September 19, 2016, 10:53

OMEGA = 1230C

TGHT = 360A, 4.75V

TBHT = 204A, 2.68V

IGP1 = 5.3e-6 Torr

Increasing ramping rate to 1.0A/min and 0.5A/min for the TGHT and TBHT respectively.


 Monday, September 19, 2016, 11:57

OMEGA = ~1300C

TBHT = 230A, 3.16V

TGHT = 409A, 5.55V

Lowering ramping rate to 0.2A/min while vaccum high

IGP1 = 3.05e-5 Torr


 Monday, September 19, 2016, 13:22

OMEGA = 1350C

TGHT = 425A, 5.82V

IGP1 = 1.97e-5 Torr

Stepping ramping rate back up to 1.0A/min


 

 Monday, September 19, 2016, 18:24

Measuring the temperature on the SiC is difficult due to the changing in emissivity as the temperature goes up.  So, I will use the MIKRON to measure the temperature on the Ta surface near the end of the tube and OMEGA for measuring the inside.  

Using the analogue pyrometer, the temperature on the Ta surface at the end of the tube was measured at around ~1450C; this temperature match the temperature on the Mikron at slope 0.98 (as usual).  To match it with OMEGA, I changed the slope to 1.04 since this measurement is taking readings on the  inside of the tube and on the SiC material.   

Note:  The measurements are NOT the absolute temperature.  These are relative temperature measurements  which give some guideline where the target current should be at for the sintering process.  Please plot the temp vs current as the TGHT is being ramped up.  At some point, the windows will get coated and the measurement is no longer reliable.   The plot will be used to give an estimation of the current for 1800C.  


 

 

 Tuesday, September 20, 2016, 15:18

there was a temperature fluctuation resulting in the MIKRON no longer matching the readout on the OMEGA

this prompted another change in the slope on the OMEGA to 1.08

TGHT was then tapped up manually to 600A/ 1800C

will remain at this max setpoint for a few days before ramping down

see attachment for raw data


 Wednesday, September 21, 2016, 11:34

temperatures dropped a small amount overnight.

tapped up manually to 625A/ 1810C

still no coating on window.

see attachment for updated raw data


 

Attachment 1: sintering_target_data.xlsx  15 kB  Uploaded Wednesday, September 21, 2016, 12:36
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