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Message ID: 650     Entry time: Wednesday, December 06, 2023, 09:57
Author: Darwin Ortiz Rosales 
Target Material: SiC 
Target Oven W.O#: 45447-4 
Source: HP-FEBIAD 
Status: Done 
Subject: 231204SiC conditioning 

Wednesday, December 06, 2023, 09:47

Target number of foils:370

Analysis discs 16 A and 16B interspersed on the end further from the laser

A are discs produced using new method and B are discs produced using milling.

Total length packed 16 cm (excluding the analysis discs)

container has 3 Ta heat shields (one inner around fins and center block, new type of 1st shield made up of three pieces)

No endcaps inserted to facilitate out-gassing

Ta coated spring at  front end

ramp to 120A @ 1A/min TGHT and to 120A on TBHT hold there until pressure drop, then ramp to 500A on TGHT and 230A TBHT.

max approx 700A on TGHT and 230A on TBHT (Omega slope set = 0.990)

Then temperature = 1800C

TBHT will be set fixed at 230 A (max).  TBHT heated manually and automatically to max.

Good vac at 5.00 e -4 Torr

Bad vac at 5.00 e-2 Torr

 IGP1= 1e-06 Torr at start of initial ramp.


Wednesday, December 06, 2023, 09:56

System left to drop pressure over previous night and now at 120A.  waiting for pressure drop.

 

 


Wednesday, December 06, 2023, 11:18

increased ramp rate to 2A/min


Wednesday, December 06, 2023, 14:41

increased ramp to 3A/min on TGHT and stopping to allow pressure to stabilize before taking temperature readings

Top temperature 1800C at 710 A but started dropping.  Increased current to 750A and left there for 4 hours.

Cool down at -2A/min TGHT and -1A/min TBHT


 

 

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