Friday, February 22, 2013, 15:49

The LP-SIS RFQ target container was previously coated with TaC and sintered up to ~1500C (TGHT @ 600A, TBHT @ 300A). 

The container is loaded with 325 discs of SiC, a total of 10.9cm in length. 

For this process,

TGHT will be ramped up to 600A and at the same time TBHT will go up to 300A.  No Ta-heat shield is used. 

The ramping rate is set to 0.2A/min.

The chamber is currently being pumped down. 

 Friday, March 01, 2013, 15:57

The target was further heated up to 650A TGHT and 300A TBHT for 4 hours yesterday; then it was cooled down.  

Some reactions on the target end (where the D-cap inserted) was observed.  

Yellow crystals on the D-cap was formed, just as we have seen before.  

Overall, the target looks good!  

See attachment#2 for the target production. 

More about the gasses analyst from the RGA later...