Thursday, March 24, 2016, 11:37  

SiC powder (<1um) [10%] was mixed with PAN solution [10%].  Solution was sonicated before e-spinning.  

Fiber mat was binded to graphite foil and heat treated to 250C in air for 1 hour.  

Samples were cut in pieces and rolled up and inserted in Ta target container (TaC coated).  Heat shield was added.

Heat Treatment #1:  

Temperature:  1600C (~350A)

Ramping up TGHT to 300A at 1A/min.  

 Tuesday, March 29, 2016, 11:11

TGHT was maintained at 410A for 1600C for 2 days (see attachment 1).  However at around 22:30 on March 28, there was a sudden increase in voltage.

Temperature raised up to 1750C.  Not sure there was a fault with the control system and it was caused by the Ta-heat shield. (see attachment #2).

 Target was cooled down around 2am on March 29. 

Samples will be removed from the chamber.